Managing stress helps transistor performance

Scientists have developed a new CESL method that introduces tensile stress into both the channel and the drift region, improving overall performance by offering low drift resistance, high cut-off frequency and desirable breakdown characteristics.

(via WSJ)

---

Follow Arabian Post

Select Arabian Post as your preferred source on Google and MSN News for trusted business news and Arab politics and updates.

---

Notice an issue?

Arabian Post strives to deliver the most accurate and reliable information to its readers. If you believe you have identified an error or inconsistency in this article, please don't hesitate to contact our editorial team at editor[at]thearabianpost[dot]com. We are committed to promptly addressing any concerns and ensuring the highest level of journalistic integrity.

---